Rapid Thermal Annealer-01
Rapid Thermal Annealer-01
TOOL ID: RTA-01/02
LOCATION: Bay 1
The RTA can anneal samples up to 1200° C. The processes can be run under atmospheric pressure under different gas environments. The tool can hold 4’’ wafers or smaller chips.
Only MOS-compatible materials are allowed. Compound semiconductors and metals are not allowed. The processes can be run in Oxygen, Nitrogen, Forming Gas, and Argon environments. Allowable anneal times are from 30 seconds to 15 minutes depending on the anneal temperature.
Rapid Thermal Annealer-01
